Phase-compensated cube corner in laser interferometry

ABSTRACT

A phase-compensating cube corner retroreflector includes three rear reflecting surfaces. The first and the third rear reflecting surfaces can be coated with a phase-compensating film stack that induces 2nπ phase difference upon reflection, where n is an integer including 0. Alternatively, all three rear reflecting surfaces can be coated with a phase-compensating film stack that induces nπ phase difference when handling linearly polarized light, or 2nπ phase difference when handling linearly or circularly polarized light. So coated, the phase-compensating cube corner preserves the polarization orientation and ellipticity of the incident light. Such a phase-compensating cube corner can be used to improve the accuracy of distance-measuring interferometers. The cube corner directs light to and from other optical elements, including a polarizing beam-splitters, mirrors, and quarter-wave plates.

DESCRIPTION OF RELATED ART

The conventional cube corner (CC) retroreflector has the property that any ray entering the effective aperture will be reflected and emerge from the entrance/exit face parallel to itself, but with opposite direction of propagation. This property is, within acceptance angle limits, independent of the orientation of the retroreflector. Retroreflectors therefore find frequent application in situations where angular orientation is difficult or impossible to control and where a mirror would therefore be unsatisfactory. FIGS. 1A and 1B illustrate a side and a front view of a conventional CC retroreflector 10.

Some conventional CC retroreflectors use the principle of total internal reflection (TIR) for its operation. The use of TIR limits the acceptable incident angles for the CC retroreflector. The use of TIR also changes the phase difference between the S and P components so the light exiting the CC retroreflector has a different polarization state, both in orientation and ellipticity, than the light entering the CC retroreflector. Experiments have shown that in solid BK-7 CC retroreflectors using TIR (without any coating), incident linearly polarized light will exhibit about 8.4 degrees of relative rotation of azimuth angle and about 11 degrees of ellipticity. Azimuth is defined as the angle between the major axis of the polarization ellipse to horizontal or vertical reference axes, and tangent of ellipticity is defined as the ratio of minor to major axes of the polarization ellipse.

The limitation on the incident angle can be removed, at the cost of a reduction in reflective efficiency, by applying a reflective coating to the rear reflecting surfaces (e.g., faces 1, 2, and 3). Thus, some conventional CC retroreflectors have their rear reflecting surfaces coated with silver and then with paint to prevent oxidation of the silver. Nonetheless, the use of the reflecting coating still causes the light exiting the CC retroreflector to have a different polarization state than the light entering the CC retroreflector. Experiments have shown that in solid BK-7 CC retroreflectors with silver coated rear reflecting surfaces, incident linearly polarized light will exhibit about 6.0 degrees of relative rotation of azimuth angle and about 1.0 degree of ellipticity. The paint used to coat the silver is also known to outgas in certain environments and contaminate the surrounding components.

FIG. 2 illustrates a conventional plane mirror interferometer system 20. A laser head 22 generates a coherent, collimated light beam consisting of two orthogonally polarized frequency components. One frequency component f_(A) (e.g., a measurement beam having a P-polarization) enters the interferometer's measurement path while the other frequency component f_(B) (e.g., a reference beam having an S-polarization) enters the interferometer's reference path.

In the measurement path, a polarizing beam-splitter 24 transmits frequency component f_(A) to a measurement plane mirror 26 mounted to a moving stage. Since frequency component f_(A) passes through a quarter-wave plate 28, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(A) is reflected by polarizing beam-splitter 24 to CC retroreflector 10. Retroreflector 10 directs frequency component f_(A) again to polarizing beam-splitter 24, which again reflects frequency component f_(A) to measurement mirror 26. Again, since frequency component f_(A) passes through quarter-wave plate 28, the returning polarization is rotated 90 degrees and the newly P-polarized frequency component f_(A) is transmitted through polarizing beam-splitter 24 onto a receiver 34.

In the reference path, polarizing beam-splitter 24 reflects frequency component f_(B) to a reference plane mirror 30. Since frequency component f_(B) passes through a quarter-wave plate 32, the returning polarization is rotated 90 degrees and the newly P-polarized frequency component f_(B) is transmitted through polarizing beam-splitter 24 to CC retroreflector 10. CC retroreflector 10 directs frequency component f_(B) through beam-splitter 24 to reference mirror 30. Again, since frequency component f_(B) passes through quarter-wave plate 32, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(B) is reflected by polarizing beam-splitter 24 coaxially with frequency component f_(A) onto receiver 34.

The importance of maintaining the polarization states through CC retroreflector 10 can be seen in FIG. 2. If CC retroreflector 10 changes the orientations of frequency components f_(A) and f_(B), then parts of frequency components f_(A) and f_(B) would leak through polarizing beam-splitter 24, which can cause a decrease in the accuracy of the distance measurements.

A paper by Paul Mauer discloses that a three-layer phase-compensating film stack can be formed on the rear reflecting surfaces of a CC retroreflector to compensate the phase shift due to TIR. “Phase Compensation of Internal Reflection” by Paul Mauer, J. Opt. Soc. Am. 56, 1219 (1966). However, the paper states that although the ellipticity of the light is preserved, the orientation of the light is changed. “Although a coating of this type compensates phase shift on total internal reflection, there remains, in general, a rotation of the plane of polarization when light is returned from a phase-compensated corner cube.” Id. at 1221. Reading this paper, one skilled in the art would be discouraged from using the phase-compensated cube corner in an interferometer system because the paper states that the polarization orientation is changed by the phase-compensated cube corner. As described above, change in the polarization orientation is known to decrease the accuracy of the interferometry system.

In a series of lecture notes for a UCLA Extension class, Philip Baumeister cites the Mauer paper for describing the use of a three-layer film stack to reduce the differential phase shift upon reflection. “Optical Coating Technologies” by Philip Baumeister, UCLA Extension (1998). In FIGS. 1-122 of these lecture notes, Baumeister shows a differential phase shift of approximately 0 degree for a normal angle of incidence when the three-layer film stack is applied to the three rear reflecting surfaces of the cube corner. Reading this paper, one skilled in the art would also read the Mauer paper described above. Thus, for the same reasons described above, one skilled in the art would be discouraged from using the phase-compensated cube corner in an interferometer system because the Mauer paper states that the polarization orientation is changed by the phase-compensated cube corner.

Thus, what is needed is a CC retroreflector that addresses the relative polarization rotation, ellipticity, reflective efficiency, and contamination problems of a conventional CC retroreflector.

SUMMARY

In one embodiment of the invention, a phase-compensating cube corner retroreflector includes three rear reflecting surfaces. The first and the third rear reflecting surfaces can be coated with a phase-compensating film stack that induces 2nπ phase difference upon reflection, where n is an integer including 0. Alternatively, all three rear reflecting surfaces can be coated with a phase-compensating film stack that induces nπ phase difference when handling linearly polarized light, or 2nπ phase difference when handling linearly or circularly polarized light. So coated, the phase-compensating cube corner preserves the polarization orientation and ellipticity of the incident light.

In one embodiment, an interferometer system includes a phase-compensating cube corner. The phase-compensating cube corner directs light to and from other optical elements, including polarizing beam-splitters, mirrors, and quarter-wave plates.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B illustrate a side and a front view of a conventional cube corner retroreflector.

FIG. 2 illustrates a conventional plane mirror interferometer system.

FIGS. 3 to 8 illustrate the derivation of the polarization orientation and ellipticity with an uncoated conventional cube corner in one embodiment of the invention.

FIGS. 9 to 12 illustrate the derivation of the polarization orientation and ellipticity with a phase-compensated cube corner having 0 degree phase difference in one embodiment of the invention.

FIGS. 13 to 16A illustrate the derivation of the polarization orientation and ellipticity with a phase-compensated cube corner having 180 degree phase difference in one embodiment of the invention.

FIGS. 16B and 16C illustrate the reflected phase from phase-compensated cube corners having 0 degree phase difference in embodiments of the invention.

FIG. 17A illustrates a plane mirror interferometer system in one embodiment of the invention.

FIGS. 17B and 17C illustrate interferometer systems in embodiments of the invention.

FIGS. 18A, 18B, and 18C illustrate a differential interferometer system in one embodiment of the invention.

FIG. 19 illustrates a single beam interferometer system in one embodiment of the invention.

FIGS. 20A, 20B, and 20C illustrate a high-resolution interferometer system in one embodiment of the invention.

FIG. 21 illustrates a linear interferometer system in one embodiment of the invention.

DETAILED DESCRIPTION

In one embodiment of the invention, a dielectric multilayer thin film coating is deposited on all reflecting surfaces or only the first and the third reflecting surfaces of a solid BK-7 cube corner. The thin film stack is designed specifically to preserve upon reflection the azimuth and ellipticity angles of the incident polarization. The thin film coating reduces polarization rotation from about 6 degrees (for silver coated cube corner) to about 0.5 degree, and ellipticity from about 1.0 degree to about 0.5 degree for a linearly polarization state. Additionally, since all reflections are accomplished with total internal reflection (TIR), the net irradiance efficiency is near 100%. Furthermore, problems associated with outgassing are alleviated because the rear reflecting surfaces of the cube corner do not need to be painted as the dielectric materials are inert.

Introduction

Reflection processes in general induce change to the polarization state of light. Polarization states change on reflection as electric field components undergo relative phase retardation and/or coordinate transformation. The extent of the change depends on the incident angle and the polarization as well as on the optical properties of the surface.

To be described herein, the polarization effects associated with total internal reflections (TIR) in solid cube corners are considered. Using Stokes parameter representation, a numerical model is created to make predictions and develop ways to preserve ellipticity and azimuth angle of the initial polarization.

Uncoated TIR Cube Corner

For an uncoated cube corner, each reflection is TIR with a phase retardation Δ of 45.2 degrees between the S and the P polarization states. For an incident S-polarized beam propagating in negative z direction into face 1 with a face folded edge perpendicular to the horizontal plane as shown in FIG. 3, the beam undergoes three reflections and finally emerges from face 3 propagating in the positive z direction. For the first reflection on face 1, the unit normal vector for the plane of incidence is given by: N ₁=0.500i+0.866j+0.000k,   (0.1) where i, j and k are unit vectors in the laboratory Cartesian frame of FIG. 3. In a Cartesian coordinate frame defined by N₁, the S-polarization makes an angle of −30 degrees with the y-axis of this frame as shown in FIG. 4. The azimuth angle is negative since it is measured counterclockwise from the y-axis. In this rotated frame, the y-axis is perpendicular while the x- and z-axes lie in the plane of incidence of face 1. The incident unit magnitude polarization vector in this frame is represented by its components a₁ and a₂. The values for components a₁ and a₂ are: a₁=−0.500   (1) a₂=0.866.   (2)

With these values of components a₁, a₂ and the azimuth ψ (=ψ₀)=−30 degrees in face 1 coordinate frame and looking into the beam as shown in FIG. 4, it is possible to use equation II.12 of Appendix II to calculate the phase difference δ between components a₁ and a₂ of the input beam as follows: (a ₁ ² −a ₂ ²)tan 2ψ=2a ₁ a ₂ cos δ.   (II.12)

Henceforth, all references to coordinate frames are from the view of looking into a beam. It is important that in equation II.12 the azimuth angle ψ is measured from the y-axis. This is only true when |a₂|>|a₁|. Solving for the phase difference δ, it is determined that: δ=δ₀=180 deg.   (2.1)

This value for phase difference δ₀ is then added to the relative phase retardation Δ, which is 45.2 degrees for uncoated TIR reflection at 54.7 degrees of incidence, to enable the calculation of ellipticity χ₁ and azimuth angle ψ₁ of the reflected beam from face 1 as follows: δ₁=Δ+δ₀=225.2 deg.   (2.2) tan α₁ a ₂ /a ₁=−1.732.   (2.3) Phase difference δ₁ is post reflection relative phase retardation between components a₁ and a₂. Additionally due to the reflection being TIR, tan α₁=tan α₀. The calculation for azimuth angle ψ₁ proceeds with the reapplication of equation II.12 using the above value for phase difference δ₁ as follows: tan 2ψ₁=2 tan α₁ cos δ₁/(1−tan² α₁) ψ₁=−25.3 deg.   (3)

Next using the Stokes parameter S₃ of equation III.15 in Appendix III, the ellipticity χ₁ is calculated as follows: S ₃=sin 2χ={2 tan α/(1+tan² α)} sin δ  (4) χ₁=sin⁻¹ [{2 tan α₁/(1+tan 2α₁)} sin δ₁]/2 χ₁=18.96 deg.   (5) In equation 5, the tangent of ellipticity angle χ₁ is the ratio of the minor to the major axis of the elliptical polarization. See equation III.0.b in Appendix III. FIG. 5 illustrates the reflected polarization state relative to the plane of incidence of face 1.

As was the case for the incident beam, the azimuth angle ψ₁ is negative with respect to the plane of incidence for face 1. The next step is to calculate azimuth angle ψ₁ relative to the plane of incidence of face 2 (ellipticity angle χ₁ remaining unchanged with the rotation of coordinate frame). This is necessary since the reflected polarization from face 2 must be made relative to the plane of that face. To perform the coordinate transformation from face 1 to face 2, it is necessary to first know the unit normal vector for the plane of incidence of face 2. The unit normal vector for the plane of incidence of face 2 is: N ₂=0.000i+0.577j+0.816k.   (5.1) Then taking the dot product of normal vectors N₁ and N₂, the angle φ₁₂ between planes for faces 1 and 2 is given by: φ₁₂=60 deg.   (5.2)

FIG. 6 illustrates the relative orientation of the two frames of reference where y₁, x₁ and y₂, x₂ are coordinate frames for faces 1 and 2 respectively. It is evident from FIG. 6 that the azimuth angle ψ₁₂ of the elliptically polarized state with respect to y₂ axis is given by, ψ₁₂=ψ₁+60=60−25.3=34.7 deg.   (5.3) The subscript 12 refers to the azimuth angle relative to frame 2 for the reflected beam from face 1. As shown in FIG. 6, the azimuth angle ψ₁₂ is a positive quantity (whereas azimuth angle ψ₁ was negative). Once azimuth angle ψ₁₂ and the ellipticity angle χ₁ are determined for y₂, x₂ frame, the associated components a₁ and a₂ are also calculated. As described earlier with the input polarization for the first reflection, new values for components a₁, a₂ and phase difference δ₁₂ are needed in advance of the second reflection. These quantities are determined from the Stokes parameter S₁ of equation III.13 from Appendix III and equation II.12 from Appendix II as follows: S ₁=(1−tan² α)/(1+tan² α).   (6a) Alternatively, these quantities are determined from the normalized form of equation III.10 from Appendix III as follows: S₁=cos 2χ cos 2ψ.   (6b) In equation 6b, the azimuth angle ψ is always measured from the x-axis. Therefore, its value equal to: ψ=90−ψ₁₂.   (6.1) Solving equation 6a for tan α and combining with equation 6b provide: $\begin{matrix} {{\tan\quad\alpha_{12}} = {\left\{ {\left( {1 - {\cos\quad 2\quad\chi_{1}\cos\quad 2_{\psi}}} \right)/\left( {1 + {\cos\quad 2\quad\chi_{1}\cos\quad{2\quad}_{\psi}}} \right)} \right\}^{1/2}\quad = {1.331.}}} & (7) \end{matrix}$ From equation II.12: cos δ₁₂={(1−tan² α₁₂)/tan α₁₂} tan 2ψ₁₂/2 δ₁₂=140.2 deg.   (8)

As a result of measuring the azimuth from frame 2 (given by azimuth angle ψ₁₂ ), new values are assigned to tan α and δ (see equations 7 and 8). So tan α and δ are inherently dependent on the reference frame in which the azimuth angle ψ is measured. For reflection 2 from uncoated face 2, the relative phase retardation Δ on tan α₁₂ (or equivalently on components a₁ and a₂) is once again 45.2 degrees. Then it follows that the phase difference δ₂ is equal to: δ₂=Δ+δ₁₂=275 deg.   (8.1)

Using calculation methods developed earlier for reflection 1, and applying equations 3 and 5 respectively for the azimuth angle ψ₂ and the ellipticity angle χ₂, it is determined that: tan 2ψ₂=2 tan α₂ cos δ₂/(1−tan² α₂) ψ₂=36.9 deg.   (8.2) $\begin{matrix} {\chi_{2} = {{{\sin^{- 1}\left\lbrack {\left\{ {2\quad\tan\quad{\alpha_{2}/\left( {1 + {\tan^{2}\alpha_{2}}} \right)}} \right\}\sin\quad\delta_{2}} \right\rbrack}/2}\quad = {{- 2.593}\quad{\deg.}}}} & (8.3) \end{matrix}$ Not that tan α₂=tan α₁₂ for TIR reflection.

The azimuth angle ψ23 with respect to face 3 is next found by noting that the y₂, x₂ and y₃, x₃ frames are relatively rotated by 60 degrees as shown in FIG. 7. This is determined from knowing that the unit normal vector for plane of incidence of face 3 is, N ₃=0.500i+0.866j+0.000k.   (8.4)

Hence the dot product of normals N₂ and N₃ yields the angle between x₂- and x₃-axes to be 60 degrees. Additionally, x₂ and x₃ axes lie in the plane of incidence for faces 2 and 3 respectively, which is analogous to the fact that previously x₁ and x₂ axes were in the plane of incidences for faces 1 and 2. In this case, however, the azimuth angle ψ₂₃ is rotated counterclockwise from y₃ axis and is therefore a negative number calculated as follows: Ψ₂₃=ψ₂−60=−23.1 deg.   (8.5)

Furthermore, tan α₂₃ is also negative and is calculated using equation 7 as follows: ψ=90−ψ₂₃   (8.6) tan α₂₃={(1−cos 2χ₂ cos 2ψ)/(1+cos 2χ₂ cos 2ψ)}^(1/2) tan α₂₃=−2.33   (8.7)

Using equation 8, cos δ₂₃={(1−tan² α₂₃)/tan α₂₃} tan 2ψ₂₃/2 δ₂₃=172.9 deg.   (8.8)

For the reflection from face 3, tan α₂₃ and δ₂₃ from reflection 2 are utilized as inputs to determine the final ellipticity and azimuth angle. Using calculation methods outlined for reflection 1 and 2, it is determined that: $\begin{matrix} {{\delta_{3} = {{\Delta + \delta_{23}}\quad = {218.1\quad{\deg.}}}},} & (8.9) \end{matrix}$ where Δ=45.2 degrees and tan α₃=tan α₂₃. Then from equations 3 and 5, tan 2ψ₃=2 tan α₃ cos δ₃/(1−tan² α₃) ψ₃=−19.8 deg.   (8.10) χ₃=sin⁻¹ [{2 tan α₃/(1+tan 2α₃)} sin δ₃]/2 χX₃=13.3 deg.   (8.11)

Then converting the azimuth angle to laboratory frame as shown in FIG. 8, $\begin{matrix} {\psi_{lab} = {{30 + {\psi_{3}.}}\quad = {10.2\quad{\deg.}}}} & (8.12) \end{matrix}$

So after three TIR reflections, the initial polarization has transformed from its linear vertical state to one that has rotated 10.2 degrees and with ellipticity of 13.3 degrees. These computed values are in close agreement with experimental results: TABLE 1 Predicted and measured azimuth and ellipticity angles Predicted (deg.) Measured (deg.) Azimuth 10.2 8.4 Ellipticity 13.3 11.0

Similar calculation can also be made for P-polarized light.

Phase Compensated TIR Cube Corner

Reflection from a TIR cube corner with uncoated faces results in a transformation of the input polarization state from linear to an elliptical state. This is a consequence of non-zero phase retardation that occurs on an uncoated surface at the TIR angle of 54.7 degrees (the incident angle for each reflection in a cube corner). The idea of phase compensated coating is to introduce an interference coating stack on the TIR surface with certain phase thicknesses and refractive indices such as to reduce the reflected phase retardation from 45.2 to 0 or 180 degrees.

In order to produce optical interference within the coating stack, refractive indices for coating materials must be chosen in such a way that the internal transmitted angles be less than their respective critical angles. This way, the phase thicknesses for all layers in the stack will influence the net change in the reflected phase. With the aid of a thin film analysis program, various coating stacks are designed and investigated below.

Case I: Coating Phase Difference is Zero Degree (i.e., Δ=180 Degrees)

In one embodiment, the thin film stack on the cube corner induces 0 degree phase difference for each of the three reflections that occur on a cube corner. The term phase difference follows the convention used in thin film calculation whereas phase retardation Δ follows the convention used in ellipsometry. The design is shown in Table 2: TABLE 2 Zero degree phase difference Layer# Material Index (at 633 nm) QWOT (nm) 1 SiO2 1.46  815 2 TiO2 2.45 1066 3 SiO2 1.46 1090 4 TiO2 2.45 1702 QWOT is an optical thickness equal to 4*N*T, where N is the refractive index and T is the physical thickness. Please note that the higher TiO2 index is achieved with ion-assist deposition process. Here layer 1 is the first layer on the BK-7 surface. FIG. 9 illustrates the phase change with the coating of Table 2.

This coating may now be incorporated in the polarization model developed for the analysis of the uncoated TIR cube corner to calculate the polarization state produced from a phase-compensated cube corner. Before continuing, however, it is important to resolve sign convention differences between thin film and polarization analysis. In the thin film convention, coatings that produce zero degree phase difference between the S and the P polarization states do not alter the sense of polarization. For example, incident right circular will remain right circular after reflection. However, the same phenomenon is described in polarization analysis as having flipped in the sense of polarization rotation from right to left circular. This happens because in polarization analysis the coordinate frame is always defined looking into the beam. Therefore, incident right circular polarization (looking into the beam) appears as left circular after reflection when viewing into the beam, even with zero degree reflected phase change. It thus appears, from the point of view of polarization analysis, that the coating induces exactly 180 degrees phase change on reflection between S and P and not zero degree as was predicted by the thin film convention. Even at normal incidence, polarization analysis predicts a change in the handedness of the polarization on reflection from right to left or visa versa, when physically there is no phase difference between S and P at normal incidence.

With this understanding, the TIR cube corner with the phase compensating coating of Table 2 is hereafter investigated.

Input Polarization

As in the earlier example of uncoated cube corner, the input state is S polarized with respect to laboratory frame. Thus, components a1, a2 and phase difference δ₀ have the following values: a₁=−0.500   (8.13) a₂=0.866   (8.14) δ₀=180.   (8.15)

Reflection 1

For reflection from face 1: Δ=180 deg.   (8.16) tan α=−0.866/0.500=−1.732.   (8.17) cos(Δ+δ₀)={(1−tan² α)/tan α} tan 2ψ₁/2   (9) sin 2χ₁={2 tan α/(1+tan² α)} sin(Δ+δ₀)   (10) Solving (9) for ψ₁ and (10) for χ₁, ψ₁=30 deg.   (10.1) χ₁=0 deg.   (10.2)

FIG. 10 shows the reflected polarization state R₁ from face 1. It is noteworthy in this instance that R₁ lies along the x-axis of frame 2. This important result will be utilized later in on embodiment where the phase compensation coating is only applied to two faces of the cube corner.

With respect to frame 2, ψ₁₂=ψ₁+60=90 deg.   (10.3) ψ=90−ψ₁₂   (10.4) $\begin{matrix} {{\tan\quad\alpha_{12}} = {\left\{ {\left( {1 - {\cos\quad 2\chi_{1}\cos\quad 2\quad\psi}} \right)/\left( {1 + {\cos\quad 2\quad\chi_{1}\cos\quad 2\quad\psi}} \right)} \right\}^{1/2}\quad = 0}} & (11) \end{matrix}$  cos δ₁₂={(1−tan² α₁₂)/tan α₁₂} tan 2ψ′ ₁₂ /2 δ₁₂=90.   (12)

Note that in equation 11, tan α₁₂=0 and this implies that |a₂|<|a₁|. Therefore, the azimuth angle ψ′₁₂ in equation 12 is measured with respect to the x-axis or in this case to the x₂-axis. The value for ψ′₁₂ is equal to, ψ′₁₂=0 deg.   (12.1)

Reflection 2

For reflection 2, no change is expected on ellipticity and azimuth angle since R₁ lies on the x₂-axis with no component of the polarization vector existing on the y₂-axis. This effect only holds true when the incident polarization to the cube corner (i.e., to face 1) is S or P polarized (with respect to laboratory frame). For any other polarization states, a vector component will exist along the y₂-axis. Δ=180 deg.   (12.2) tan α=tan α₁₂=0   (12.3) cos(Δ+δ₁₂)={(1−tan² α)/tan α} tan 2ψ′₂/2   (13) sin 2χ₂={2 tan α/(1+tan² α)} sin((Δ+δ₁₂)   (14) Solving equation 13 for the azimuth angle ψ′₂ and equation 14 for the ellipticity angle χ₂, ψ′₂=0 deg.   (14.1) χ₂=0 deg.   (14.2) Again note that tan α₁₂=0. Therefore the azimuth ψ′₂ is measured with respect to x₂-axis.

With respect to frame 3, the polarization vector R₂ forms an angle as shown in FIG. 11, ψ₂₃=ψ′₂+30=30 deg.   (14.3)

In using the S₁ Stokes parameter in equations 6a and 6b, care must be taken by noting that the azimuth angle in these equations are measured from the x-axis. That is to say, $\begin{matrix} {\psi = {90 - \psi_{23}}} & (14.4) \\ {\quad{= {60\quad{\deg.}}}} & \quad \\ {{\tan\quad\alpha_{23}} = \left\{ {\left( {1 - {\cos\quad 2\chi_{2}\cos\quad 2\psi}} \right)/\left( {1 + {\cos\quad 2\chi_{2}\cos\quad 2\psi}} \right)} \right\}^{1/2}} & (14.5) \\ {\quad{= 1.735}} & \quad \end{matrix}$  cos δ₂₃={(1−tan² α₂₃)/tan α₂₃} tan 2ψ₂₃/2   (14.6) δ₂₃=180 deg.

Reflection 3

For reflection 3, Δ=180 deg.   (14.7) tan α=tan α₂₃=1.732.   (14.8) cos(Δ+δ₂₃)={(1−tan² α)/tan α} tan 2ψ₃/2   (15) sin 2χ₃={2 tan α/(1+tan² α)} sin(Δ+δ₂₃)   (16) Solving equation 15 for the azimuth angle ψ₃ and equation 16 for the ellipticity angle χ₃, ψ₃=−30 deg.   (16.1) χ₃=0 deg.   (16.2)

The azimuth angle relative to laboratory frame is given by, $\begin{matrix} {\psi_{lab} = {{30 + \psi_{3}}\quad = {0\quad{\deg.}}}} & (16.3) \end{matrix}$

With the azimuth angle ψ_(lab)=0 and ellipticity χ₃=0, the cube corner with three TIR coatings preserves the state of linear and vertical input polarization.

Case II: Only Faces 1 and 3 are Coated.

In one embodiment, only faces 1 and 3 are coated with the coating of Table 2. If the same S-polarization is used as input, then the calculations of the ellipticity χ₁ and azimuth angle ψ₁ up to reflection 2 will be the same as that of Case I. Therefore the Case I results for reflection 1 will be utilized here.

Reflection 2

As described in reflection 1 of Case I, the reflected polarization R₁ from face 1 lies in the plane of incidence of face 2 as shown in FIG. 10. Thus, regardless of the amount of phase change that occurs from face 2, the reflected state R₂ will always lie in that plane of incidence (i.e., there will be no change in its azimuth angle or ellipticity). Therefore, face 2 could have been left uncoated in Case I and the same end result would have been achieved. This result, however, is only valid for linear S or P input polarization states. Δ=45.2 deg. (for uncoated surface)   (16.4) δ₁₂=90   (16.5) tan α=tan α₁₂=0   (16.6) cos(Δ+δ₁₂)={(1−tan² α)/tan α} tan 2ψ′₂/2   (17) sin 2χ₂={2 tan α/(1+tan² α)} sin((Δ+δ₁₂)   (18) Solving equation 17 for the azimuth angle ψ′₂ and equation 18 for the ellipticity angle χ₂, ψ′₂=0 deg.   (18.1) χ₂=0 deg.   (18.2)

With respect to frame 3 as shown in FIG. 11, the reflected state R₂ has ψ₂₃=ψ′₂+30=30 deg.   (18.3)

Because these values for the azimuth angle ψ′₂, the ellipticity angle χ₂, and the azimuth angle ψ₂₃ are identical to corresponding reflection 2 values from Case I, same results are also expected for reflection 3 of this case to that of Case I. From the point of view of vertical linear or horizontal linear input states, the two cases (both Case I and II) produce the same results. However, the same results cannot be produced for circularly polarized input states when only the first and the third faces are coated.

Case III: Coating Phase Difference is 180 Degrees (i.e., Δ=0 degree).

In one embodiment, the thin film stack on the cube corner induces 180 degrees phase difference on reflection. The coating design is shown in Table 3. TABLE 3 180 degree phase difference Layer# Material Index (at 633 nm) QWOT (nm) 1 TiO2 2.45 1316 2 SiO2 1.46 1279 3 TiO2 2.45 2595 Here layer 1 is the first layer on the BK-7 surface. FIG. 13 illustrates the phase change with the coating of Table 3.

With the 180 degrees phase difference coating on all three faces, the output polarization state from a cube corner is now calculated.

Input Polarization

The input state is S polarized with respect to laboratory frame. a₁=−0.500   (18.4) a₂=0.866   (18.5) δ₀=180 deg.   (18.6)

Reflection 1

For reflection 1, Δ=0 deg.   (18.7) tan α=−0.866/0.500=−1.732.   (18.8) cos(Δ+δ₀)={(1−tan² α)/tan α} tan 2ψ₁/2   (19) sin 2χ₁={2 tan α/(1+tan² α)} sin(Δ+δ₀)   (20) Solving equation 19 for the azimuth angle ψ₁ and equation 20 for the ellipticity angle χ₁, ψ₁=−30 deg.   (20.1) χ₁=0 deg.   (20.2)

FIG. 14 shows that the reflected R₁ is collinear with the input state. The apparent magnitude difference between S and R₁, in FIG. 14, is only meant for clarity, since for TIR the reflected amplitude is equal to that of the incident.

With respect to frame 2, ψ₁₂=ψ₁+60=30 deg.   (20.3) ψ=90−ψ₁₂   (20.4) $\begin{matrix} {{\tan\quad\alpha_{12}} = {\left\{ {\left( {1 - {\cos\quad 2\chi_{1}\cos\quad 2\quad\psi}} \right)/\left( {1 + {\cos\quad 2\chi_{1}\cos\quad 2\quad\psi}} \right)} \right\}^{1/2}\quad = 1.732}} & (20.5) \end{matrix}$  cos δ₁₂={(1−tan² α₁₂)/tan α₁₂} tan 2ψ ₁₂ /2   (20.6) δ₁₂=180 deg.   (20.7)

Reflection 2

For reflection 2, Δ=0 deg.   (20.8) tan α=tan α₁₂=1.732   (20.9) cos(Δ+δ₁₂)={(1−tan² α)/tan α} tan 2ψ₂/2   (21) sin 2χ₂={2 tan α/(1+tan² α)} sin((Δ+δ₁₂)   (22) Solving equation 21 for the azimuth angle ψ₂ and equation 22 for the ellipticity angle χ₂, ψ₂=30 deg.   (22.1) χ₂=0 deg.   (22.2)

The angle that R₂ forms relative to the y3-axis is shown in FIG. 15. This angle is, ψ₂₃=ψ₂−60=−30 deg.   (22.3) ψ=90−ψ₂₃   (22.4) $\begin{matrix} {{\tan\quad\alpha_{23}} = {\left\{ {\left( {1 - {\cos\quad 2\chi_{2}\cos\quad 2\psi}} \right)/\left( {1 + {\cos\quad 2\chi_{2}\cos\quad 2\psi}} \right)} \right\}^{1/2}\quad = {- 1.732}}} & (22.5) \end{matrix}$  cos δ₂₃={(1−tan² α₂₃)/tan α₂₃} tan 2ψ ₂₃ /2   (22.6) δ₂₃=180 deg.

Reflection 3

For reflection 3, Δ=0 deg.   (22.7) tan α=tan α₂₃=−1.732.   (22.8) cos(Δ+δ₂₃)={(1−tan² α)/tan α} tan 2ψ₃/2   (23) sin 2χ₃={2 tan α/(1+tan² α)} sin(Δ+δ₂₃)   (24) Solving equation 23 for the azimuth angle ψ₃ and equation 24 for the ellipticity angle χ₃, ψ₃=−30 deg.   (24.1) χ₃=0 deg.   (24.2)

As shown in FIG. 16A, the azimuth angle relative to laboratory frame is given by, $\begin{matrix} {\psi_{lab} = {{30 + \psi_{3}}\quad = {0\quad{\deg.}}}} & (24.3) \end{matrix}$

This is the exact result that was obtained in Case I, where all sides were coated with zero degree phase difference coating (in Table 2). Therefore, Cases I, II and III all produce the same result for linearly polarized input states.

Case IV: Additional Designs of Phase-Compensating Film Stack

In one embodiment, the thin film stack on the cube corner induces 0 degree phase difference on reflection (i.e., Δ=180 degrees). The coating design is shown in Table 4. FIG. 16B illustrates the phase change with the coating of Table 4. TABLE 4 0 degree phase difference Layer# Material Index (at 633 nm) QWOT (nm) 1 MgF2 1.38  715 2 TiO2 2.45 1903 Here layer 1 is the first layer on the BK-7 surface.

In another embodiment, the thin film stack on the cube corner induces 0 degree phase difference on reflection. The coating design is shown in Table 5. Please note that the lower TiO2 index is a result of a deposition process without ion-assistance. FIG. 16C illustrates the phase change with the coating of Table 5. TABLE 5 0 degree phase difference Layer# Material Index (at 633 nm) QWOT (nm) 1 TiO2 2.30 262.5 2 SiO2 1.45 346.5 3 TiO2 2.30 1018.5 4 SiO2 1.45 462 5 TiO2 2.30 850.5 Here layer 1 is the first layer on the BK-7 surface.

For linearly polarized input states, the coating designs of Tables 4 and 5 would produce the desired result if all three faces or only the first and the third faces are coated. For circularly polarized input states, the coating designs of Tables 4 and 5 would produce the desired result if all three faces are coated.

Application to Interferometry Systems

Plane Mirror Interferometer

FIG. 17A illustrates a plane mirror interferometer system 100 in one embodiment of the invention. System 100 is similar to system 20 of FIG. 2 except that the conventional cube corner 10 has been replaced with a CC retroreflector 102 having phase-compensated interference film stacks 104. Depending on the embodiment, phase-compensated CC retroreflector 102 can be any of the CC retroreflectors with a phase-compensating film stack deposited on all three reflecting faces or only the first and the third reflecting faces as described above. As CC retroreflector 102 only handles linearly polarized input states, any film stack that induces nπ degree phase difference upon reflection can be used (e.g., 0 degree phase difference and Δ=180 degrees, and 180 degrees phase difference and Δ=0 degree) when all three faces are coated. A film stack that induces 2nπ degree phase difference upon reflection can be used when all three faces or only the first and the third reflecting faces are coated. Whenever nπ and 2nπ are mentioned, n is an integer including 0.

Although not shown, a 45 degree mirror can be placed in the reference path so reference mirror 30 is parallel to measurement mirror 26. The 45 degree mirror would be interposed between polarizing beam-splitter 24 and quarter-wave plate 32. The reference mirror 30 can be mounted to a moving component to provide a differential measurement relative to measurement mirror 26.

FIG. 17B illustrates an interferometer system 120 in one embodiment of the invention. System 120 is similar to system 100 of FIG. 17A except that measurement mirror 26 has been replaced with a phase-compensated CC retroreflector 122. The measurement path has changed as follows.

In the measurement path, polarizing beam-splitter 24 transmits frequency component f_(A) to phase-compensated cube corner 122 mounted to a moving stage. Since frequency component f_(A) passes through a quarter-wave plate 28, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(A) is reflected by polarizing beam-splitter 24 to phase-compensated CC retroreflector 102. Note that after passing through quarter-wave plate 28, component f_(A) is circularly polarized when it is incident on CC retroreflector 122.

CC retroreflector 102 directs frequency component f_(A) again to polarizing beam-splitter 24, which again reflects frequency component f_(A) to CC retroreflector 122. Again, since frequency component f_(A) passes through quarter-wave plate 28, the returning polarization is rotated 90 degrees and the newly P-polarized frequency component f_(A) is transmitted through polarizing beam-splitter 24 onto a receiver 34. Note again that after passing through quarter-wave plate 28, component f_(A) is circularly polarized when it is incident on CC retroreflector 122.

Depending on the embodiment, CC retroreflector 122 can be any of the CC retroreflectors with a phase-compensating film stack that induces 2nπ degree phase difference upon reflection deposited on all three reflecting faces as described above (e.g., 0 degree phase difference and Δ=180 degrees). This is because CC retroreflector 142 must return a right circularly polarized light as a left circularly polarized light (or vice versa) so that after passing through quarter-wave plate 28, polarizing beam-splitter 24 would send the light onto the correct path. The handedness of the polarization is defined with the beam coming towards the observer.

FIG. 17C illustrates an interferometer system 140 in one embodiment of the invention. System 140 is similar to system 120 of FIG. 17B except that CC retroreflector 122 has been replaced with phase-compensated CC retroreflectors 142 and 144. The measurement path has changed as follows.

Polarizing beam-splitter 24 transmits frequency component f_(A) to phase-compensated CC retroreflector 142 mounted to a moving stage. Since frequency component f_(A) passes through a quarter-wave plate 28, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(A) is reflected by polarizing beam-splitter 24 to phase-compensated CC retroreflector 102. Note that after passing through quarter-wave plate 28, component f_(A) is circularly polarized when it is incident on CC retroreflector 142.

CC retroreflector 102 directs frequency component f_(A) again to polarizing beam-splitter 24, which reflects frequency component f_(A) to phase-compensated CC retroreflector 144. Again, since frequency component f_(A) passes through quarter-wave plate 28, the returning polarization is rotated 90 degrees and the newly P-polarized frequency component f_(A) is transmitted through polarizing beam-splitter 24 onto a receiver 34. Note that after passing through quarter-wave plate 28, component f_(A) is circularly polarized when it is incident on CC retroreflector 144.

Depending on the embodiment, CC retroreflectors 142 and 144 can be any of the CC retroreflectors with a phase-compensating film stack that causes 2nπ degree phase difference upon reflection deposited on all three reflecting faces as described above. This is because CC retroreflectors 142 and 144 must return a right circularly polarized light as a left circularly polarized light (or vice versa) so that after passing through quarter-wave plate 28, polarizing beam-splitter 24 would send the light onto the correct path. The handedness of the polarization is defined with the beam coming towards the observer.

Differential Interferometer System

FIGS. 18A, 18B, and 18C illustrate a differential interferometer system 200 in one embodiment of invention. A laser head 202 generates a coherent, collimated light beam consisting of two orthogonally polarized frequency components. One frequency component f_(A) (e.g., a measurement beam having a P-polarization) enters the interferometer's measurement path while the other frequency component f_(B) (e.g., a reference beam having an S-polarization) enters the interferometer's reference path.

In the measurement path, a polarizing beam-splitter 204 transmits frequency component f_(A) to a measurement plane mirror 206 mounted to a moving stage. Since frequency component f_(A) passes through a quarter-wave plate 208, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(A) is reflected by polarizing beam-splitter 204 to a phase-compensated CC retroreflector 210. CC retroreflector 210 directs frequency component f_(A) again to polarizing beam-splitter 204, which again reflects frequency component f_(A) to measurement plane mirror 206. Again, since frequency component f_(A) passes through quarter-wave plate 208, the returning polarization is rotated 90 degrees and the newly P-polarized frequency component f_(A) is transmitted through polarizing beam-splitter 204 on a mirror 212.

Mirror 212 directs frequency component f_(A) to a phase-compensated CC retroreflector 214, which returns frequency component f_(A) back to mirror 212. Since frequency component f_(A) passes through quarter-wave plate 216, the returning polarization is rotated 90 degrees. Mirror 212 then returns the newly S-polarized frequency component f_(A) to polarizing beam-splitter 204, which reflects frequency component f_(A) to a phase-compensated CC retroreflector 218. CC retroreflector 218 returns frequency component f_(A) to polarizing beam-splitter 204, which reflects frequency component f_(A) to a receiver 220.

In the reference path, polarizing beam-splitter 204 reflects frequency component f_(B) to phase-compensated CC retroreflector 218. Phase-compensated CC retroreflector 218 returns frequency component f_(B) to polarizing beam-splitter 204, which reflects frequency component f_(B) to mirror 212. Mirror 212 directs frequency component f_(B) to phase-compensated CC retroreflector 214, which returns frequency component f_(B) back to mirror 212. Since frequency component f_(B) passes through quarter-wave plate 216, the returning polarization is rotated 90 degrees.

Mirror 212 directs the newly P-polarized frequency component f_(B) to polarizing beam-splitter 204, which transmitted frequency component f_(B) to a reference mirror 222 that may move. Since frequency component f_(B) passes through a quarter-wave plate 208, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(B) is reflected by polarizing beam-splitter 204 to phase-compensated CC retroreflector 210. CC retroreflector 210 returns frequency component f_(B) to polarizing beam-splitter 204, which again reflects frequency component f_(B) to reference mirror 222. Again, since frequency component f_(B) passes through quarter-wave plate 208, the returning polarization is rotated 90 degrees and the P-polarized frequency component f_(A) is transmitted through polarizing beam-splitter 204 onto receiver 220.

Depending on the embodiment, phase-compensated CC retroreflector 214 can be any of the CC retroreflectors with a phase-compensating film stack that induces 2nπ degree difference upon reflection deposited on all three reflecting faces as described above. This is because it must return a right circularly polarized light as a left circularly polarized light (or vice versa) so that after passing through quarter-wave plate 216, polarizing beam-splitter 204 would send the light onto the correct path. The handedness of the polarization is defined with the beam coming towards the observer.

Depending on the embodiment, phase compensated CC retroreflectors 210 and 218 can be any of the CC retroreflectors with a phase-compensating film stack deposited on all three reflecting faces. The film stack is deposited on all three reflecting faces because components f_(A) and f_(B) may strike the reflecting faces of the retroreflectors in different orders. As CC retroreflectors 210 and 218 handle only linearly polarized input states, any film stack that induces nπ degree difference upon reflection can be used.

Single Beam Interferometer System

FIG. 19 illustrates a single beam interferometer system 300 in one embodiment of the invention. A laser head 302 generates a coherent, collimated light beam consisting of two orthogonally polarized frequency components. One frequency component f_(A) (e.g., a measurement beam having a P-polarization) enters the interferometer's measurement path while the other frequency component f_(B) (e.g., a reference beam having an S-polarization) enters the interferometer's reference path.

In the measurement path, a polarizing beam-splitter 304 transmits frequency component f_(A) to a phase-compensated CC retroreflector 306 mounted to a moving stage. Since frequency component f_(A) passes through a quarter-wave plate 308, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(A) is reflected by polarizing beam-splitter 304 to a receiver 310.

In the reference path, polarizing beam-splitter 304 reflects frequency component f_(B) to a phase-compensated CC retroreflector 312. Since frequency component f_(B) passes through a quarter-wave plate 314, the returning polarization is rotated 90 degrees and the newly P-polarized frequency component f_(B) is transmitted through polarizing beam-splitter 304 to receiver 310.

Depending on the embodiment, phase-compensated CC retroreflectors 306 and 312 can be any of the CC retroreflectors with a phase-compensating film stack that induces 2nπ phase difference upon reflection deposited on all three reflecting faces as described above. This is because CC retroreflectors 306 and 312 must return a right circularly polarized light as a left circularly polarized light (or vice versa) so that after passing through corresponding quarter-wave plates 308 and 314, polarizing beam-splitter 304 would send the light onto the correct path. The handedness of the polarization is defined with the beam coming towards the observer.

High-Resolution Interferometer System

FIGS. 20A, 20B, and 20C illustrate a high-resolution interferometer system 400 in one embodiment of invention. A laser head 402 generates a coherent, collimated light beam consisting of two orthogonally polarized frequency components. One frequency component f_(A) (e.g., a measurement beam having a P-polarization) enters the interferometer's measurement path while the other frequency component f_(B) (e.g., a reference beam having an S-polarization) enters the interferometer's reference path.

In the measurement path, a polarizing beam-splitter 404 transmits frequency component f_(A) to a measurement plane mirror 406 mounted to a moving stage. Since frequency component f_(A) passes through a quarter-wave plate 408, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(A) is reflected by polarizing beam-splitter 404 to a phase-compensated CC retroreflector 410. CC retroreflector 410 directs frequency component f_(A) again to polarizing beam-splitter 404, which again reflects frequency component f_(A) to measurement plane mirror 406. Again, since frequency component f_(A) passes through quarter-wave plate 408, the returning polarization is rotated 90 degrees and the newly P-polarized frequency component f_(A) is transmitted through polarizing beam-splitter 404 on a mirror 412.

Mirror 412 directs frequency component f_(A) to a phase-compensated CC retroreflector 414, which returns frequency component f_(A) back to mirror 412. Mirror 412 then returns frequency component f_(A) to polarizing beam-splitter 204, which transmits frequency component f_(A) to plane mirror 406. Again, since frequency component f_(A) passes through quarter-wave plate 408, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(A) is reflected by polarizing beam-splitter 404 to phase-compensated CC retroreflector 410. CC retroreflector 410 directs frequency component f_(A) again to polarizing beam-splitter 404, which again reflects frequency component f_(A) to measurement plane mirror 406. Again, since frequency component f_(A) passes through quarter-wave plate 408, the returning polarization is rotated 90 degrees and the newly P-polarized frequency component f_(A) is transmitted through polarizing beam-splitter 404 to a receiver 416.

In the reference path, polarizing beam-splitter 404 reflects frequency component f_(B) to a mirror 418. Since frequency component f_(A) passes through quarter-wave plate 420, the returning polarization is rotated 90 degrees and the newly P-polarized frequency component f_(A) is transmitted through polarizing beam-splitter 404 to phase-compensated CC retroreflector 410. CC retroreflector 410 returns frequency component f_(A) to polarizing beam-splitter 404, which transmits frequency component f_(A) to mirror 418. Again, since frequency component f_(A) passes through quarter-wave plate 420, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(A) is reflected by polarizing beam-splitter 404 to mirror 412.

Mirror 412 directs frequency component f_(A) to phase-compensated CC retroreflector 414, which returns frequency component f_(A) back to mirror 412. Mirror 412 then returns frequency component f_(A) to polarizing beam-splitter 204, which reflects frequency component f_(A) to mirror 420. Since frequency component f_(A) passes through quarter-wave plate 420, the returning polarization is rotated 90 degrees and the newly P-polarized frequency component f_(A) is transmitted by polarizing beam-splitter 404 to phase-compensated CC retroreflector 410. CC retroreflector 410 returns frequency component f_(A) to polarizing beam-splitter 404, which transmits frequency component f_(A) to mirror 418. Again, since frequency component f_(A) passes through quarter-wave plate 420, the returning polarization is rotated 90 degrees and the newly S-polarized frequency component f_(A) is reflected by polarizing beam-splitter 404 to receiver 416.

Depending on the embodiment, phase-compensated CC retroreflector 414 can be any of the CC retroreflectors with a phase-compensating film stack deposited on all three reflecting faces or only the first and the third faces as described above. The phase-compensating film stack that induces nit degree phase difference upon reflection can be used when all three faces are coated. A film stack that induces 2nπ degree phase difference upon reflection can be used when all three faces or only the first and the third reflecting faces are coated.

Depending on the embodiment, phase-compensated CC retroreflector 410 can be any of the CC retroreflectors with a phase-compensating film stack deposited on all three reflecting faces. The film stack is deposited on all three faces because components f_(A) and f_(B) each makes two passes through the cube corner and may strike the faces in different orders. As CC retroreflector 410 only handle linearly polarized input states, any phase-compensating interference film that induces nπ phase difference upon reflection can be used.

Linear Interferometer System

FIG. 21 illustrates a linear interferometer system 500 in one embodiment of the invention. A laser head 502 generates a coherent, collimated light beam consisting of two orthogonally polarized frequency components. One frequency component f_(A) (e.g., a measurement beam having a P-polarization) enters the interferometer's measurement path while the other frequency component f_(B) (e.g., a reference beam having an S-polarization) enters the interferometer's reference path.

In the measurement path, a polarizing beam-splitter 504 transmits frequency component f_(A) to a phase-compensated CC retroreflector 506 mounted to a moving stage. Phase-compensated retroreflector 506 returns frequency component f_(A) to polarizing beam splitter 504, which transmits the frequency component f_(A) to a receiver 508.

In the reference path, polarizing beam-splitter 504 reflects frequency component f_(B) to a phase-compensated CC retroreflector 510. Phase-compensated retroreflector 510 returns frequency component f_(B) to polarizing beam splitter 504, which reflects the frequency component f_(A) to receiver 508.

Depending on the embodiment, phase-compensated CC retroreflectors 506 and 510 can be any of the CC retroreflectors with a phase-compensating film stack deposited on all three reflecting faces or only the first and the third reflecting faces as described above. The phase-compensating film stack that induces nπ degree phase difference upon reflection can be used when all three faces are coated. A film stack that induces 2nπ degree phase difference upon reflection can be used when all three faces or only the first and the third reflecting faces are coated.

Summary

With the aid of a numerical model, polarization effects from a TIR cube corner were analyzed. This model predicts significant changes to the azimuth and ellipticity angles of incident polarization from an uncoated cube corner. As a consequence, multilayer interference coatings were designed to produce zero and 180 degrees phase difference between S and P states for TIR reflection. The results indicate that with all or only first and third faces coated, the azimuth and ellipticity angles of the initial polarization were preserved.

Various other adaptations and combinations of features of the embodiments disclosed are within the scope of the invention. Although the various interferometry systems described above use vertically and horizontally polarized light, the interferometry systems can also use left and right circularly polarized light. Although the various interferometry systems described above show measurement along a single axis, it is understood that these systems could be adopted for multi-axes measurement by replicating the setups or integrating the single-axis measurement components into a multi-axes module. Although specific coating designs for BK-7 cube corners are disclosed, one skilled in the art can modify the coating designs for cube corners made of other materials such as fused silica, SF- 10, and etc. Furthermore, one skilled in the art can modify the coating designs to suit other operating wavelengths. Numerous embodiments are encompassed by the following claims.

Appendix I

For a monochromatic plane wave E propagating in the z direction with coordinates E_(x) and E_(y), E _(x) =a ₁ cos(τ+δ₁)   I.1.a E _(y) =a ₂ cos(τ+δ₂)   I.1.b E_(x)=0,   I.1c where a₁ is the amplitude along the x-axis, δ₁ is the phase along the x-axis (please note this is different from the relative phase difference δ₁ after reflection from the first face described above), a₂ is the amplitude along the y-axis, δ₂ is the phase along the y-axis (please note this is different from the relative phase difference δ₂ after reflection from the second face described above), τ=ωt−kz, ω is angular frequency, t is time, k is wave number (2π/λ), and z is propagation direction.

Rewriting (I.1.a) and (I.1.b), E _(x) /a ₁=cos(τ+δ₁)=cos τ cos δ₁−sin τ sin δ₁   I.1.d E _(y) /a ₂=cos(τ+δ₂)=cos τ cos δ₂−sin τ sin δ₂.   I.1.e

To eliminate τ dependence, we multiply each component by sin δ₁, sin δ₂, cos δ₁ and cos δ₂: (E _(x) /a ₁)sin δ₂=sin δ₂(cos τ cos δ₁−sin τ sin δ₁)   I.2.a (E _(y) /a ₂)sin δ₁=sin δ₁(cos τ cos δ₂−sin τ sin δ₂)   I.2.b (E _(x) /a ₁)cos δ₂=cos δ₂(cos τ cos δ₁−sin τ sin δ₁)   I.2.c (E _(y) /a ₂)cos δ₁=cos δ₁(cos τ cos δ₂−sin τ sin δ₂)   I.2.d

Subtracting (I.2.b) from (I.2.a), (E _(x) /a ₁)sin δ₂−(E _(y) /a ₂)sin δ₁=cos τ sin(δ₂−δ₁).   I.3.a

Subtracting (I.2.d) from (I.2.c), (E _(x) /a ₁)cos δ₂−(E _(y) /a ₂)cos δ₁=sin τ sin(δ₂−δ₁).   I.3.b

Squaring and adding (I.3.a) and (I.3.b) yields, (E _(x) /a ₁)²+(E _(y) /a ₂)²−2(E _(x) /a ₁)(E _(y) /a ₂)(sin δ₂ sin δ₁+cos δ₁ cos δ₂)=sin²(δ₂−δ₁) and simplifying, (E _(x) /a ₁)²+(E _(y) /a ₂)²−2(E _(x) /a ₁)(E _(y) /a ₂)cos (δ₂−δ₁)=sin²(δ₂−δ₁).   I.4 Appendix II

In the rotated coordinate system (ξ, η), the components of the electric vector are related by, E _(ξ) =E _(x) cos ψ+E _(y) sin ψ  II.1.a E _(η) =−E _(x) sin ψ+E _(y) cos ψ,   II.1.b where ψ is the angle between (ξ, η) and (x, y) coordinate axes. In the (ξ, η) coordinate system, the equation for the electric vector is given by, E _(ξ) =a*cos(τ+δ_(ξ))   II.2.a E _(η) =b*cos(τ+δ_(η)),   II.2.b where a is the amplitude along the ξ-axis, b is the amplitude along the η-axis, and τ=ωt−kz. Then using the results of equation II.2.a and II.2.b, the expressions for the electric vector reduces to, E _(ξ) =a*cos(τ+δ_(ξ))   II.2.c E _(η) =+/−b*sin(τ+δ_(ξ)).   II.2.d

Now a relationship between the amplitudes a, b of the rotated frame and a₁, a₂ of the x, y frame is established. First equations I.1.a, I.1.b, II.2.c and (II.2.d) are expanded as follows: E _(x) =a ₁ cos(τ+δ₁)=a ₁(cos τ cos δ₁−sin τ sin δ₁)   II.3.a E _(y) =a ₂ cos(τ+δ₂)=a ₂(cos τ cos δ₂−sin τ sin δ₂)   II.3.b E _(ξ) =a*cos(τ+δ_(ξ))=a(cos τ cos δ_(ξ)−sin τ sin δ₂)   II.3.c E _(η) =+/−b*sin(τ+δ_(ξ))=+/−b(sin τ cos δ_(ξ)+cos τ sin δ_(ξ)).   II.3.d

Combining equation II.1.a and II.1.b with equations II.3.a and II.3.b, E _(ξ) =a ₁(cos τ cos δ₁−sin τ sin δ₁)cos ψ+a ₂(cos τ cos δ₂−sin τ sin δ₂)sin ψ  II.4.a E _(η) =−a ₁(cos τ cos δ₁−sin τ sin δ₁)sin ψ+a ₂(cos τ cos δ₂−sin τ sin δ₂)cos ψ  II.4.b then equating the corresponding terms of equations II.3.c, II.3.d and equations II.4.a, II.4.b: For E_(ξ) equation,

cos τ terms: a*cos δ_(ξ) =a ₁ cos δ₁ cos ψ+a ₂ cos δ₂ sin ψ  II.5.a

sin τ terms: a*sin δ_(ξ) =a ₁ sin δ₁ cos ψ+a ₂ sin δ₂ sin ψ  II.5.b For E_(η) equations,

cos τ terms: +/−b*sin δ_(ξ) =−a ₁ cos δ₁ sin ψ+a ₂ cos δ₂ cos ψ  II.6.a

sin τ terms: +/−b*cos δ_(ξ) =a ₁ sin δ₁ sin ψ+a ₂ sin δ₂ cos ψ  II.6.b

Now squaring and adding equations II.5.a and II.5.b, a ² =a ₁ ² cos² ψ+a ₂ ² sin² ψ+2a ₁ a ₂ cos ψsin ψcos(δ₂−δ₁),   II.7.a and performing the same operations with equations II.6.a and II.6.b, b ² =a ₁ ² sin² ψ+a ₂ ² cos² ψ−2a ₁ a ₂ sin ψcos ψcos(δ₂−δ₁).   II.7.b

Adding (II.7.a) and (II.7.b), a ² +b ² =a ₁ ² +a ₂ ².   II.8

Next equations II.5.a and II.6.b are multiplied together and equations II.5.b and II.6.a are also multiplied together as follows: +/−ab*cos² δ_(ξ) =−a ₁ a ₂ sin δ₂ cos δ₁ cos² ψ+a ₁ a ₂ sin δ₁ cos δ₂ sin² ψ  II.9.a +/−ab*sin² δ_(ξ) =−a ₁ a ₂ sin δ₂ cos δ₁ sin² ψ+a ₁ a ₂ sin δ₁ cos δ₂ cos² ψ  II.9.b then adding (II.9.a) and (II.9.b), +/−ab=a ₁ a ₂ sin(δ₁−δ₂) or alternatively, −/+ab=a ₁ a ₂ sin(δ₂−δ₁).   II.10

Furthermore, dividing equation II.6.b by equation II.5.a, and dividing equation II.6.a by equation II.5.b yields: +/−b/a=(a ₁ sin δ₁ sin ψ−a ₂ sin δ₂ cos ψ)/(a ₁ cos δ₁ cos ψ+a ₂ cos δ₂ sin ψ)   II.11.a +/−b/a=(−a ₁ cos δ₁ sin ψ+a ₂ cos δ₂ cos ψ)/(a ₁ sin δ₁ cos ψ+a ₂ sin δ₂ sin ψ),   II.11.b and equating the right hand side (RHS) of equations II.11.a and II.11.b, (a ₁ ² −a ₂ ²)sin 2ψ=2a ₁a₂ cos(δ₂−δ₁)cos 2ψ or equivalently, (a ₁ ² −a ₂ ²)tan 2ψ=2a ₁a₂ cos δ  II.12 where δ=δ₂−δ₁.

The last relation is derived by multiplying equation II.10 by 2 and then dividing by equation II.8, −/+2ab/(a ² +b ²)=2a ₁ a ₂ sin δ/(a ₁ ² +a ₂ ²)   II.13 Appendix III

To derive the expressions for the Stokes parameters, let us recall equations II.8, II.12, and II.13, a ² +b ² =a ₁ ² +a ₂ ².   (II.8) (a ₁ ² −a ₂ ²)tan 2ψ=2a ₁ a ₂ cos δ  (II.12) −/+2ab/(a ² +b ²)=2a ₁ a ₂ sin δ/(a ₁ ² +a ₂ ²)   (II.13) and define tan α=a ₂ /a ₁   (III.0.a) tan χ=+/−b/a.   (III.0.b)

From equation II.12, we make the following definitions:

Right Hand Side Definitions (RHS): S ₁ =a ₁ ² −a ₂ ²   III.1 S₂=2a₁a₂ cos δ  III.2

Left Hand Side Definition (LHS): S ₂=(a ₁ ² −a ₂ ²)tan 2ψ  III.3

Similarly from equation II.13, we have the following definitions:

Right Hand Side Definition (RHS): S₃=2a₁a₂ sin δ  III.4

Left Hand Side Definition (LHS): S ₃=−/+2ab(a ₁ ² +a ₂ ²)/(a ² +b ²)   III.5

Next defined is a dependent parameter S₀. This is defined by combining the squares of the RHS definitions of S₁, S₂ and S₃,

Right Hand Side Definition (RHS): $\begin{matrix} {{S_{o}^{2} = {{S_{1}^{2} + S_{2}^{2} + S_{3}^{2}}\quad = {{\left( {a_{1}^{2} - a_{2}^{2}} \right)^{2} + \left( {2a_{1}a_{2}\cos\quad\delta} \right)^{2} + \left( {2a_{1}a_{2}\sin\quad\delta} \right)^{2}}\quad = \left( {a_{1}^{2} + a_{2}^{2}} \right)^{2}}}}{S_{0} = {a_{1}^{2} + a_{2}^{2}}}} & {{III}{.6}} \end{matrix}$

Left Hand Side Definition (LHS): S ₀ ² =S ₁ ² +S ₂ ² +S ₃ ²   III.7

Taking next the LHS definition of S₃, S ₃=−/+2ab(a ₁ ² +a ₂ ²)/(a ² +b ²), or alternatively with the substitution of equation III.6, S₃ becomes, S ₃=−/+2abS ₀(a ² +b ²).

Further, note that tan χ=−/+b/a; and thus S₃ may be expressed as, S ₃=2S ₀ tan χ/(1+tan² χ)=S ₀ sin 2χ S₃=S₀ sin 2χ.   III.8

Now to express S₁ and S₂ in terms of the parameters S₀, ψ and χ, we take the LHS definition of equation III.3 and rewrite it as, S₂=S₁ tan 2ψ.   III.9

Then substituting equations III.8 and III.9 into equation III.7, S ₀ ² =S ₁ ²+(S ₁ tan 2ψ)²+(S ₀ sin 2χ)² and solving for S₁, S₁=S₀ cos 2ψ cos 2χ.   III.10

Now substitute equation III.10 into equation III.9 to arrive at a new form of S₂, S₂=S₀ sin 2ψ cos 2χ.   III.11

Summarizing the results, S ₀ ² =S ₁ ² +S ₂ ² +S ₃ ² S₁=S₀ cos 2ψ cos 2χ S₂=S₀ sin 2ψ cos 2χ S₃=S₀ sin 2χ.

Expressing the Stokes parameters with respect to RHS definitions, S ₀ =a ₁ ² +a ₂ ² S ₁ =a ₁ ² −a ₂ ² S₂=2a₁a₂ cos δ S₃=2a₁a₂ sin δ.

These RHS Stokes parameters are then normalize by dividing by S₁. s₀=1 s ₁=(a ₁ ² −a ₂ ²)/(a ₁ ² +a ₂ ²) s ₂=2a ₁ a ₂ cos δ/(a ₁ ² +a ₂ ²) s ₃=2a ₁ a ₂ sin δ/(a ₁ ² +a ₂ ²).

Then expressing in terms of tan α=a₂/a₁, s₀=1   (III.12) s ₁=(1−tan² α)/(1+tan² α)   (III.13) s ₂=2 tan αcos δ/(1+tan² α)   (III.14) s ₃=2 tan αsin δ/(1+tan² α)   (III.15) 

1. A phase-compensating cube corner retroreflector, comprising: an entrance/exit face; a first rear reflecting face; a phase-compensating film stack atop the first rear reflecting face, wherein the first phase-compensating film stack induces 2nπ phase difference in light upon reflection, wherein n is an integer including 0; a second rear reflecting face devoid of any phase-compensating film stack; a third rear reflecting face; another phase-compensating film stack atop the third rear reflecting face, wherein said another phase-compensating film stack induces the 2nπ phase difference in light upon reflection; wherein light enters and exits the cube corner retroreflector with substantially the same polarization orientation and substantially the same polarization ellipticity.
 2. The retroreflector of claim 1, wherein the phase-compensating film stack and said another phase-compensating film stack each comprises a stack of thin films wherein reflections from the thin films interfere to induce the 2nπ phase difference, and an interface between the last film and air provides total internal reflection.
 3. The retroreflector of claim 1, wherein the phase-compensating film stack and said another phase-compensating stack each comprises: a first layer atop the corresponding reflecting face, the first layer comprising of silicon dioxide having an optical thickness of approximately 815 nm; a second layer atop the first layer, the second layer comprising titanium dioxide having an optical thickness of approximately 1066 nm; a third layer atop the second layer, the third layer comprising silicon dioxide having an optical thickness of approximately 1090 nm; and a fourth layer atop the third layer, the fourth layer comprises titanium dioxide having an optical thickness of approximately 1702 nm.
 4. The retroreflector of claim 1, wherein the phase-compensating film stack and said another phase-compensating stack each comprises: a first layer atop the corresponding reflecting face, the first layer comprising of magnesium dioxide having an optical thickness of approximately 715 nm; and a second layer atop the first layer, the second layer comprising titanium dioxide having an optical thickness of approximately 1903 nm.
 5. The retroreflector of claim 1, wherein the phase-compensating film stack and said another phase-compensating stack each comprises: a first layer atop the corresponding reflecting face, the first layer comprising of titanium dioxide having an optical thickness of approximately 262.5 nm; a second layer atop the first layer, the second layer comprising silicon dioxide having an optical thickness of approximately 346.5 nm; a third layer atop the second layer, the third layer comprising titanium dioxide having an optical thickness of approximately 1018.5 nm; a fourth layer atop the third layer, the fourth layer comprises silicon dioxide having an optical thickness of approximately 462 nm; and a fifth layer atop the fourth layer, the fifth layer comprising titanium dioxide having an optical thickness of approximately 850.5 nm.
 6. An optical system, comprising: a polarizing beam-splitter that separates an input beam into at least one output beam having a specific polarization state; and a cube corner retroreflector comprising at least two rear reflecting surfaces with phase-compensating film stacks, wherein the beam travels in a path comprising the cube corner retroreflector and the polarizing beam-splitter.
 7. The system of claim 6, wherein the cube corner retroreflector comprises a first rear reflecting surface and a third rear reflecting surface with the phase-compensating film stacks.
 8. The system of claim 7, wherein the phase-compensating film stacks each comprises a stack of thin films wherein reflections from the thin films interfere to induce 2nπ phase difference where n is an integer including 0, and an interface between the last film and air provides total internal reflection.
 9. The system of claim 6, wherein the phase-compensating film stacks each comprises: a first layer atop the corresponding reflecting face, the first layer comprising of silicon dioxide having an optical thickness of approximately 815 nm; a second layer atop the first layer, the second layer comprising titanium dioxide having an optical thickness of approximately 1066 nm; a third layer atop the second layer, the third layer comprising silicon dioxide having an optical thickness of approximately 1090 nm; and a fourth layer atop the third layer, the fourth layer comprises titanium dioxide having an optical thickness of approximately 1702 nm.
 10. The system of claim 6, wherein the phase-compensating film stacks each comprises: a first layer atop the corresponding reflecting face, the first layer comprising of titanium dioxide having an optical thickness of approximately 1316 nm; a second layer atop the first layer, the second layer comprising silicon dioxide having an optical thickness of approximately 1279 nm; and a third layer atop the second layer, the third layer comprising titanium dioxide having an optical thickness of approximately 2595 nm.
 11. The system of claim 6, wherein the phase-compensating film stacks each comprises: a first layer atop the corresponding reflecting face, the first layer comprising of magnesium dioxide having an optical thickness of approximately 715 nm; and a second layer atop the first layer, the second layer comprising titanium dioxide having an optical thickness of approximately 1903 nm.
 12. The system of claim 6, wherein the phase-compensating film stacks each comprises: a first layer atop the corresponding reflecting face, the first layer comprising of titanium dioxide having an optical thickness of approximately 262.5 nm; a second layer atop the first layer, the second layer comprising silicon dioxide having an optical thickness of approximately 346.5 nm; a third layer atop the second layer, the third layer comprising titanium dioxide having an optical thickness of approximately 1018.5 nm; a fourth layer atop the third layer, the fourth layer comprises silicon dioxide having an optical thickness of approximately 462 nm; and a fifth layer atop the fourth layer, the fifth layer comprising titanium dioxide having an optical thickness of approximately 850.5 nm.
 13. An optical system, comprising: a polarizing beam-splitter that separates an input beam into at least one output beam having a specific polarization state; a quarter-wave plate; a cube corner retroreflector comprising three rear reflecting faces with phase-compensating film stacks, wherein the output beam travels in a path comprising the quarter-wave plate, the cube corner retroreflector, the quarter-wave plate, and the polarizing beam-splitter.
 14. The system of claim 13, wherein the phase-compensating film stacks each comprises a stack of thin films wherein reflections from the thin films interfere to induce 2nπ phase difference where n is an integer including 0, and an interface between the last film and air provides total internal reflection:
 15. The system of claim 13, wherein the phase-compensating film stacks each comprises: a first layer atop the corresponding reflecting face, the first layer comprising of silicon dioxide having an optical thickness of approximately 815 nm; a second layer atop the first layer, the second layer comprising titanium dioxide having an optical thickness of approximately 1066 nm; a third layer atop the second layer, the third layer comprising silicon dioxide having an optical thickness of approximately 1090 nm; and a fourth layer atop the third layer, the fourth layer comprises titanium dioxide having an optical thickness of approximately 1702 nm.
 16. The system of claim 13, wherein the phase-compensating film stacks each comprises: a first layer atop the corresponding reflecting face, the first layer comprising of magnesium dioxide having an optical thickness of approximately 715 nm; and a second layer atop the first layer, the second layer comprising titanium dioxide having an optical thickness of approximately 1903 nm.
 17. The system of claim 13, wherein the phase-compensating film stacks each comprises: a first layer atop the corresponding reflecting face, the first layer comprising of titanium dioxide having an optical thickness of approximately 262.5 nm; a second layer atop the first layer, the second layer comprising silicon dioxide having an optical thickness of approximately 346.5 nm; a third layer atop the second layer, the third layer comprising titanium dioxide having an optical thickness of approximately 1018.5 nm; a fourth layer atop the third layer, the fourth layer comprises silicon dioxide having an optical thickness of approximately 462 nm; and a fifth layer atop the fourth layer, the fifth layer comprising titanium dioxide having an optical thickness of approximately 850.5 nm.
 18. An interferometry system, comprising: a polarizing beam-splitter that separates an input beam into a measurement beam having a first polarization and a reference beam having a second polarization; a first quarter-wave plate; a measurement mirror mounted to a moving component to be measured; a cube corner retroreflector comprising at least two rear reflecting surfaces with phase-compensating film stacks, wherein the measurement beam travels in a measurement path comprising the first quarter-wave plate, the measurement mirror, the first quarter-wave plate, the polarizing beam-splitter, the cube corner retroreflector, the polarizing beam-splitter, the first quarter-wave plate, the measurement mirror, the first quarter-wave plate, and the polarizing beam-splitter; a second quarter-wave plate; a reference mirror, wherein the reference beam travels in a reference path comprising the second quarter-wave plate, the reference mirror, the second quarter-wave plate, the polarizing beam-splitter, the cube corner retroreflector, the polarizing beam-splitter, the second quarter-wave plate, the reference mirror, the second quarter-wave plate, and the polarizing beam-splitter.
 19. An interferometry system, comprising: a polarizing beam-splitter that separates an input beam into a measurement beam having a first polarization and a reference beam having a second polarization; a first quarter-wave plate; a first cube corner retroreflector mounted to a moving component to be measured, the first cube corner retroreflector comprising three rear reflecting surfaces with phase-compensating film stacks; a second cube corner retroreflector comprising at least two rear reflecting surfaces with phase-compensating film stack, wherein the measurement beam travels in a measurement path comprising the first quarter-wave plate, the first cube corner retroreflector, the first quarter-wave plate, the polarizing beam-splitter, the second cube corner retroreflector, the polarizing beam-splitter, the first quarter-wave plate, the first cube corner retroreflector, the first quarter-wave plate, and the polarizing beam-splitter; a second quarter-wave plate; a reference mirror, wherein the reference beam travels in a reference path comprising the second quarter-wave plate, the reference mirror, the second quarter-wave plate, the polarizing beam-splitter, the second cube corner retroreflector, the polarizing beam-splitter, the second quarter-wave plate, the reference mirror, the second quarter-wave plate, and the polarizing beam-splitter.
 20. The system of claim 19, wherein the phase-compensating film stacks of the first cube corner retroreflector each comprises a stack of thin films wherein reflections from the thin films interfere to induce 2nπ phase difference where n an integer including 0, and the last film provides total internal reflection.
 21. An interferometry system, comprising: a polarizing beam-splitter that separates an input beam into a measurement beam having a first polarization and a reference beam having a second polarization; a first quarter-wave plate; a first cube corner retroreflector and a second cube corner retroreflector mounted to a movable component to be measured, the first and the second cube corner retroreflectors each comprising three rear reflecting surfaces with phase-compensating film stacks; a third cube corner retroreflector comprising at least two rear reflecting surfaces with phase-compensating film stacks, wherein the measurement beam travels in a measurement path comprising the first quarter-wave plate, the first cube corner retroreflector, the first quarter-wave plate, the polarizing beam-splitter, the third cube corner retroreflector, the polarizing beam-splitter, the first quarter-wave plate, the second cube corner retroreflector, the first quarter-wave plate, and the polarizing beam-splitter; a second quarter-wave plate; a reference mirror, wherein the reference beam travels in a reference path comprising the second quarter-wave plate, the reference mirror, the second quarter-wave plate, the polarizing beam-splitter, the second third corner retroreflector, the polarizing beam-splitter, the second quarter-wave plate, the reference mirror, the second quarter-wave plate, and the polarizing beam-splitter.
 22. The system of claim 21, wherein the phase-compensating film stacks of the first and the second cube corner retroreflectors each comprises a stack of thin films wherein reflections from the thin films interfere to induce 2nπ phase difference where n is an integer including 0, and the last film provides total internal reflection.
 23. An interferometry system, comprising: a polarizing beam-splitter that separates an input beam into a measurement beam having a first polarization and a reference beam having a second polarization; a first quarter-wave plate; a measurement mirror mounted to a moving component to be measured; a second quarter-wave plate; a first cube corner retroreflector, a second cube corner retroreflector, and a third cube corner retroreflector each comprising three rear reflecting surfaces with phase-compensating film stacks, wherein the measurement beam travels in a measurement path comprising the first quarter-wave plate, the measurement mirror, the first quarter-wave plate, the polarizing beam-splitter, the first cube corner retroreflector, the polarizing beam-splitter, the first quarter-wave plate, the measurement mirror, the first quarter-wave plate, the polarizing beam-splitter, the second quarter-wave plate, the second cube corner retroreflector, the second quarter-wave plate, the polarizing beam-splitter, the third cube corner retroreflector, and the polarizing beam-splitter; a reference mirror, wherein the reference beam travels in a reference path comprising the third cube corner retroreflector, the polarizing beam-splitter, the second quarter-wave plate, the second cube corner retroreflector, the second quarter-wave plate, the polarizing beam-splitter, the first quarter-wave plate, the reference mirror, the first quarter-wave plate, the polarizing beam-splitter, the first cube corner retroreflector, the polarizing beam-splitter, the first quarter-wave plate, the reference mirror, the first quarter-wave plate, and the polarizing beam-splitter.
 24. The system of claim 23, wherein the phase-compensating film stacks of the second cube corner each comprises a stack of thin films wherein reflections from the thin films interfere to induce 2nπ phase difference where n is an integer including 0, and an interface between the last film and air provides total internal reflection.
 25. An interferometry system, comprising: a polarizing beam-splitter that separates an input beam into a measurement beam having a first polarization and a reference beam having a second polarization; a first quarter-wave plate; a first cube corner retroreflector mounted to a moving component to be measured, the first cube corner retroreflector comprising three rear reflecting surfaces with phase-compensating film stacks, wherein the measurement beam travels in a measurement path comprising the first quarter-wave plate, the first cube corner retroreflector, the first quarter-wave plate, and the polarizing beam-splitter; a second quarter-wave plate; and a second cube corner retroreflector comprising three rear reflecting surfaces with phase-compensating film stacks, wherein the reference beam travels in a reference path comprising the second quarter-wave plate, the second cube corner retroreflector, the second quarter-wave plate, and the polarizing beam-splitter.
 26. The system of claim 25, wherein the phase-compensating film stacks of the first and the second cube corner retroreflectors each comprises a stack of thin films wherein reflections from the thin films interfere to induce 2nπ phase difference where n is an integer including 0, and the last film provides total internal reflection.
 27. An interferometry system, comprising: a polarizing beam-splitter that separates an input beam into a measurement beam having a first polarization and a reference beam having a second polarization; a first quarter-wave plate; a measurement mirror mounted to a moving component to be measured; a first cube corner retroreflector, comprising three rear reflecting surfaces with phase-compensating film stacks; a second cube corner retroreflector, comprising at least two rear reflecting surfaces with phase-compensating film stacks, wherein the measurement beam travels in a measurement path comprising the first quarter-wave plate, the measurement mirror, the first quarter-wave plate, the polarizing beam-splitter, the first cube corner retroreflector, the polarizing beam-splitter, the first quarter-wave plate, the measurement mirror, the first quarter-wave plate, the polarizing beam-splitter, the second cube corner retroreflector, the polarizing beam-splitter, the first quarter-wave plate, the measurement mirror the first quarter-wave plate, the polarizing beam-splitter, the first cube corner retroreflector, the polarizing beam-splitter, the first quarter-wave plate, the measurement mirror, the first quarter-wave plate, and the polarizing beam-splitter; a second quarter-wave plate; and a reference mirror, wherein the reference beam travels in a reference path comprising the second quarter-wave plate, the reference mirror, the second quarter-wave plate, the polarizing beam-splitter, the first cube corner retroreflector, the polarizing beam-splitter, the second quarter-wave plate, the reference mirror, the second quarter-wave plate, the polarizing beam-splitter, the second cube corner retroreflector, the polarizing beam-splitter, the second quarter-wave plate, the reference mirror, the second quarter-wave plate, the polarizing beam-splitter, the first cube corner retroreflector, the polarizing beam-splitter, the second quarter-wave plate, the reference mirror, the second quarter-wave plate, and the polarizing beam-splitter.
 28. The system of claim 27, wherein the phase-compensating film stacks of the the second cube corner retroreflector each comprises a stack of thin films wherein reflections from the thin films interfere to induce 2nπ phase difference where n is an integer including 0, and the last film provides total internal reflection.
 29. An interferometry system, comprising: a polarizing beam-splitter that separates an input beam into a measurement beam having a first polarization and a reference beam having a second polarization; a first cube corner retroreflector mounted to a moving component to be measured, first cube corner retroreflector comprising at least two rear reflecting surfaces with phase-compensating film stacks, wherein the measurement beam travels in a measurement path comprising the first cube corner retroreflector and the polarizing beam-splitter; and a second cube corner retroreflector comprising at least two rear reflecting surfaces with phase-compensating film stacks, wherein the reference beam travels in a reference path comprising the second cube corner retroreflector and the polarizing beam-splitter. 